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We have developed the complex technological operations, which allows to produce sensing elements for high-speed semiconductor gas sensors.

The measuring elements, manufactured by using the proposed film microheater, have low power expenditure, high sensitivity, reliability and longevity. Using them in corresponding electronics devices make it possible to keep temperature of catalytic films on the given level with high precision. It makes it possible to avoid autocatalysis.

Sensors, produced on the film microhotplate base, are able to work after the attack of high concentrated detected gas.

TAF-sensors withstand high dynamic loads. Tests of the film platinum heaters have shown their stability, both at constant and pulsed heating.

The semiconductor TAF-sensors allow to produce reliable, high-speed, efficient and inexpensive devices. This devices can measure concentrations not only of the combustible gases (methane, propane, butane, hydrogen and heavy hydrocarbons, alcohol, solvent vapors, CO), but ammonia, hydrogen sulfide, and many other toxic gases.

Made in small lots, our sensors are successfully tested in several research centers in our country and abroad.

The table presents main characteristics of the semiconductor TAF-sensor compared with their closest analogues TGS 2611 and TGS 842 by Figaro company (Japan).

	TAF-sensor	TGS 2611	TGS 842
Power consumption at simple heating up to 450°C, mW	< 65	> 280	835 (typical)
Substrate material thickness, mm	10 - 50
Heater thermal response time, ms	50
Heater resistance (at room temperature), W	10 - 30	59	30.0 ± 3.0
Heater resistance drift, % a year	< 2
Heater stability at pulsed measurements (20®450®20°C), number of cycles	Not less - 5 ×10⁶
Chip sizes, mm	6х6
Hot spot sizes, mm²	300х300
Heater material	Pt
Range of analyzed gas concentration measurement, %	0.005 - 2.5 methane, propane	0,005 - 1,0 methane, propane	0,005 - 1,0 methane, propane